Study of Short- and Long-Term Effectiveness of Ammonium Sulfide as Surface Passivation for InAs/GaSb Superlattices Using X-Ray Photoelectron Spectroscopy
Identifieur interne : 003838 ( Main/Repository ); précédent : 003837; suivant : 003839Study of Short- and Long-Term Effectiveness of Ammonium Sulfide as Surface Passivation for InAs/GaSb Superlattices Using X-Ray Photoelectron Spectroscopy
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Abstract
The surface quality of as-etched and ammonium sulfide [(NH4)2S]-treated samples of an indium arsenide/gallium antimonide (InAs/GaSb) superlattice structure were compared using x-ray photoelectron spectroscopy (XPS). After short exposure to the atmosphere following passivation, treated samples displayed a complete absence or significant reduction of native oxides compared with untreated samples, confirming better quality of surface passivation. However, extensive sulfidization was not observed, and after extended exposure, the native oxides reappeared on the treated surface, establishing the need for a capping layer for long-term passivation stability. The surface study provides definitive confirmation of previous results on electrical properties of photodetectors fabricated on InAs/GaSb superlattices.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Study of Short- and Long-Term Effectiveness of Ammonium Sulfide as Surface Passivation for InAs/GaSb Superlattices Using X-Ray Photoelectron Spectroscopy</title><author><name sortKey="Banerjee, Koushik" uniqKey="Banerjee K">Koushik Banerjee</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratory for Photonics and Magnetics (ECE Department), University of Illinois, Chicago, 851 S. Morgan Street</s1><s2>Chicago, IL 60607</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Chicago, IL 60607</wicri:noRegion></affiliation></author><author><name sortKey="Ghosh, Siddhartha" uniqKey="Ghosh S">Siddhartha Ghosh</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratory for Photonics and Magnetics (ECE Department), University of Illinois, Chicago, 851 S. Morgan Street</s1><s2>Chicago, IL 60607</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Chicago, IL 60607</wicri:noRegion></affiliation></author><author><name sortKey="Plis, Elena" uniqKey="Plis E">Elena Plis</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Center for High Technology Materials (ECE Department), University of New Mexico, 1313, Goddard Street SE, MSC04 2710</s1><s2>Albuquerque, NM 87106</s2><s3>USA</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">État du Mississippi</region></placeName></affiliation></author><author><name sortKey="Krishna, Sanjay" uniqKey="Krishna S">Sanjay Krishna</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Center for High Technology Materials (ECE Department), University of New Mexico, 1313, Goddard Street SE, MSC04 2710</s1><s2>Albuquerque, NM 87106</s2><s3>USA</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">État du Mississippi</region></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">11-0087453</idno><date when="2010">2010</date><idno type="stanalyst">PASCAL 11-0087453 INIST</idno><idno type="RBID">Pascal:11-0087453</idno><idno type="wicri:Area/Main/Corpus">003662</idno><idno type="wicri:Area/Main/Repository">003838</idno></publicationStmt><seriesStmt><idno type="ISSN">0361-5235</idno><title level="j" type="abbreviated">J. electron. mater.</title><title level="j" type="main">Journal of electronic materials</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Electrical properties</term><term>Engraving</term><term>Gallium Antimonides arsenides</term><term>Gallium antimonides</term><term>III-V compound</term><term>III-V semiconductors</term><term>Indium antimonides</term><term>Indium arsenides</term><term>Passivation</term><term>Photodetector</term><term>Sulfides</term><term>Superlattice</term><term>X-ray photoelectron spectra</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Sulfure</term><term>Passivation</term><term>Arséniure d'indium</term><term>Semiconducteur III-V</term><term>Composé III-V</term><term>Superréseau</term><term>Spectre photoélectron RX</term><term>Gravure</term><term>Antimoniure d'indium</term><term>Propriété électrique</term><term>Photodétecteur</term><term>Antimoniure de gallium</term><term>Gallium Arsénioantimoniure</term><term>InAs</term><term>GaSb</term><term>Substrat GaSb</term><term>8560G</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The surface quality of as-etched and ammonium sulfide [(NH<sub>4</sub>)<sub>2</sub>S]-treated samples of an indium arsenide/gallium antimonide (InAs/GaSb) superlattice structure were compared using x-ray photoelectron spectroscopy (XPS). After short exposure to the atmosphere following passivation, treated samples displayed a complete absence or significant reduction of native oxides compared with untreated samples, confirming better quality of surface passivation. However, extensive sulfidization was not observed, and after extended exposure, the native oxides reappeared on the treated surface, establishing the need for a capping layer for long-term passivation stability. The surface study provides definitive confirmation of previous results on electrical properties of photodetectors fabricated on InAs/GaSb superlattices.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0361-5235</s0></fA01><fA02 i1="01"><s0>JECMA5</s0></fA02><fA03 i2="1"><s0>J. electron. mater.</s0></fA03><fA05><s2>39</s2></fA05><fA06><s2>10</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Study of Short- and Long-Term Effectiveness of Ammonium Sulfide as Surface Passivation for InAs/GaSb Superlattices Using X-Ray Photoelectron Spectroscopy</s1></fA08><fA11 i1="01" i2="1"><s1>BANERJEE (Koushik)</s1></fA11><fA11 i1="02" i2="1"><s1>GHOSH (Siddhartha)</s1></fA11><fA11 i1="03" i2="1"><s1>PLIS (Elena)</s1></fA11><fA11 i1="04" i2="1"><s1>KRISHNA (Sanjay)</s1></fA11><fA14 i1="01"><s1>Laboratory for Photonics and Magnetics (ECE Department), University of Illinois, Chicago, 851 S. Morgan Street</s1><s2>Chicago, IL 60607</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="02"><s1>Center for High Technology Materials (ECE Department), University of New Mexico, 1313, Goddard Street SE, MSC04 2710</s1><s2>Albuquerque, NM 87106</s2><s3>USA</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA20><s1>2210-2214</s1></fA20><fA21><s1>2010</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>15479</s2><s5>354000193349460050</s5></fA43><fA44><s0>0000</s0><s1>© 2011 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>22 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>11-0087453</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of electronic materials</s0></fA64><fA66 i1="01"><s0>DEU</s0></fA66><fC01 i1="01" l="ENG"><s0>The surface quality of as-etched and ammonium sulfide [(NH<sub>4</sub>)<sub>2</sub>S]-treated samples of an indium arsenide/gallium antimonide (InAs/GaSb) superlattice structure were compared using x-ray photoelectron spectroscopy (XPS). After short exposure to the atmosphere following passivation, treated samples displayed a complete absence or significant reduction of native oxides compared with untreated samples, confirming better quality of surface passivation. However, extensive sulfidization was not observed, and after extended exposure, the native oxides reappeared on the treated surface, establishing the need for a capping layer for long-term passivation stability. The surface study provides definitive confirmation of previous results on electrical properties of photodetectors fabricated on InAs/GaSb superlattices.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03F15</s0></fC02><fC02 i1="02" i2="X"><s0>001D03C</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Sulfure</s0><s2>NA</s2><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Sulfides</s0><s2>NA</s2><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Sulfuro</s0><s2>NA</s2><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Passivation</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Passivation</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Pasivación</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Arséniure d'indium</s0><s2>NK</s2><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Composé III-V</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>III-V compound</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Compuesto III-V</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Superréseau</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Superlattice</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Superred</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Spectre photoélectron RX</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>X-ray photoelectron spectra</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Gravure</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Engraving</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Grabado</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Antimoniure d'indium</s0><s2>NK</s2><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Indium antimonides</s0><s2>NK</s2><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Propriété électrique</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Electrical properties</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Propiedad eléctrica</s0><s5>10</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Photodétecteur</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Photodetector</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Fotodetector</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Antimoniure de gallium</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Gallium antimonides</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Gallium Arsénioantimoniure</s0><s2>NC</s2><s2>FX</s2><s2>NA</s2><s5>16</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Gallium Antimonides arsenides</s0><s2>NC</s2><s2>FX</s2><s2>NA</s2><s5>16</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Galio Antimoniuro arseniuro</s0><s2>NC</s2><s2>FX</s2><s2>NA</s2><s5>16</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>InAs</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>GaSb</s0><s4>INC</s4><s5>47</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Substrat GaSb</s0><s4>INC</s4><s5>48</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>8560G</s0><s4>INC</s4><s5>71</s5></fC03><fN21><s1>059</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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